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| DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. PACKAGE DIMENSIONS (Unit: mm) 2.0 0.2 FEATURES * Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz * Gate Length : Lg 0.20 m * Gate Width : Wg = 200 m 2. 1 0 0 .2 0.5 TYP. ORDERING INFORMATION PART NUMBER NE325S01-T1 NE325S01-T1B SUPPLYING FORM Tape & reel 1000 pcs./reel Tape & reel 4000 pcs./reel MARKING D D 3 0.65 TYP. 1.9 0.2 1.6 4 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID IG Ptot Tch Tstg 4.0 -3.0 IDSS 100 165 125 -65 to +125 V V mA 1. 2. 3. 4. Source Drain Source Gate A mW C C 0.125 0.05 0.4MAX 4.0 0.2 RECOMMENDED OPERATING CONDITION (TA = 25 C) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 10 MAX. 3 20 0 Unit V mA dBm Document No. P11138EJ3V0DS00 (3rd edition) Date Published October 1996 N Printed in Japan (c) 1.5 MAX 2.0 0.2 2 1996 NE325S01 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain SYMBOL IGSO IDSS VGS(off) gm NF Ga 11.0 20 -0.2 45 MIN. TYP. 0.5 60 -0.7 60 0.45 12.5 0.55 MAX. 10 90 -2.0 UNIT TEST CONDITIONS VGS = -3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 100 A VDS = 2V, ID = 10 mA VDS = 2 V, ID = 10 mA, f = 12 GHz A mA V mS dB dB TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 Ptot - Total Power Dissipation - mW 100 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - mA 200 80 VGS = 0 V 60 -0.2 V 40 -0.4 V 20 -0.6 V -0.8 V 150 100 50 0 50 100 150 200 250 0 1.5 VDS - Drain to Source Voltage - V 3.0 TA - Ambient Temperature - C DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 24 VDS = 2 V ID - Drain Current - mA 60 MSG. - Maximum Stable Gain - dB MAG. - Maximum Available Gain - dB |S21s|2 - Forward Insertion Gain - dB 20 MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY VDS = 2 V ID = 10 mA MSG. MAG. 40 16 20 12 |S21S|2 0 -2.0 -1.0 VGS - Gate to Source Voltage - V 0 8 4 1 2 4 6 8 10 14 20 30 f - Frequency - GHz 2 NE325S01 Gain Calculations MSG. = | S21 | | S12 | K= 1 + | |2 - | S11 |2 - | S22 |2 2 | S12 | | S21 | MAG. = | S21 | (K K 2 - 1) | S12 | = S11 * S22 - S21 * S12 NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA 20 NF - Noise Figure - dB Ga - Associated Gain - dB NF - Noise Figure - dB NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHz 14 Ga Ga - Associated Gain - dB 13 12 2.0 1.5 1.0 0.5 NF 11 10 Ga 16 1.0 12 0.5 NF 0 1 2 4 6 8 10 14 8 0 4 20 30 10 20 30 ID - Drain Current - mA f - Frequency - GHz 3 NE325S01 S-PARAMETERS VDS = 2 V, ID = 10 mA START 2 GHz, STOP 18 GHz, STEP 500 MHz Marker 1: 4 GHz 2: 8 GHz 3: 12 GHz 4: 16 GHz 5: 18 GHz S11 1.0 0.5 S12 +90 5 2.0 +135 +45 4 0 180 1 2 3 5 4 0 3 1 -0.5 2 -1.0 -2.0 -135 -45 Rmax. = 1 -90 Rmax. = 0.25 S21 +90 S22 1.0 0.5 2.0 +135 1 2 +45 5 3 4 0 180 5 4 0 3 2 1 -135 -45 -0.5 -90 -2.0 -1.0 Rmax. = 5 Rmax. = 1 4 NE325S01 S-PARAMETERS MAG. AND ANG. VDS = 2 V, ID = 10 mA FREQUENCY MHz 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 MAG. .999 .994 .952 .939 .926 .866 .821 .783 .788 .755 .721 .679 .634 .595 .563 .537 .505 .478 .451 .421 .415 .424 .448 .477 .508 .530 .554 .579 .595 .625 .652 .688 .709 S11 ANG. (deg.) -26.7 -29.0 -38.8 -44.6 -51.1 -56.7 -60.6 -63.7 -70.5 -76.1 -82.9 -91.9 -101.6 -111.7 -122.5 -132.5 -142.0 -151.0 -159.2 -168.7 179.9 167.1 152.5 138.9 128.1 120.0 113.2 109.4 104.0 97.3 89.6 82.2 75.3 4.914 4.748 4.770 4.654 4.547 4.413 4.285 4.192 4.207 4.219 4.231 4.234 4.207 4.136 4.059 3.958 3.834 3.735 3.647 3.609 3.589 3.556 3.473 3.331 3.161 3.006 2.913 2.822 2.753 2.685 2.601 2.505 2.372 MAG. S21 ANG. (deg.) 151.5 147.2 137.3 131.3 125.0 117.6 111.6 105.7 99.8 93.7 87.2 80.0 72.6 65.3 58.1 51.1 44.3 38.3 32.5 26.6 20.6 13.4 5.5 -1.8 -8.5 -14.2 -19.4 -24.6 -30.6 -37.0 -43.8 -50.8 -57.2 .029 .036 .044 .050 .055 .059 .064 .069 .075 .079 .085 .092 .095 .098 .104 .105 .108 .109 .110 .112 .115 .116 .122 .121 .118 .115 .118 .118 .120 .121 .123 .124 .122 MAG. S12 ANG. (deg.) 74.5 73.3 65.3 62.7 59.3 53.7 50.8 48.4 45.1 41.7 38.6 33.4 28.8 24.2 20.5 16.0 11.7 8.6 5.3 1.9 .3 -3.3 -7.9 -13.1 -15.9 -18.0 -18.9 -19.9 -22.0 -25.5 -30.4 -34.2 -37.3 .444 .507 .472 .485 .490 .477 .474 .465 .439 .421 .401 .361 .322 .288 .256 .229 .208 .187 .164 .147 .124 .108 .103 .126 .157 .184 .214 .235 .264 .297 .317 .345 .383 MAG. S22 ANG. (deg.) -18.9 -26.8 -32.7 -37.1 -40.9 -45.3 -48.5 -51.7 -55.4 -58.9 -63.4 -69.3 -75.7 -83.0 -92.1 -101.2 -108.5 -114.8 -120.0 -124.7 -133.2 -151.1 175.2 143.2 120.6 110.2 106.0 102.0 100.0 94.1 88.4 82.5 76.2 5 NE325S01 AMP. PARAMETERS VDS = 2 V, ID = 10 mA FREQUENCY MHz 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 34.12 24.91 23.80 22.80 20.04 18.61 17.63 17.62 17.02 16.47 15.82 15.19 14.60 14.12 13.66 13.15 12.73 12.34 12.09 11.99 11.93 11.83 11.64 11.40 11.14 11.08 11.03 11.00 11.13 11.16 11.31 11.22 15.21 13.86 13.15 12.73 12.61 12.56 12.56 12.31 11.91 11.54 11.50 11.49 11.57 11.87 12.17 GUmax dB GAmax dB |S21|2 dB 13.83 13.53 13.57 13.36 13.15 12.89 12.64 12.45 12.48 12.50 12.53 12.53 12.48 12.33 12.17 11.95 11.67 11.45 11.24 11.15 11.10 11.02 10.81 10.45 10.00 9.56 9.29 9.01 8.79 8.58 8.30 7.97 7.50 |S12|2 dB -30.68 -28.81 -27.20 -26.07 -25.22 -24.56 -23.90 -23.24 -22.45 -22.08 -21.45 -20.71 -20.45 -20.15 -19.69 -19.57 -19.29 -19.29 -19.19 -19.05 -18.81 -18.74 -18.31 -18.38 -18.54 -18.76 -18.59 -18.57 -18.42 -18.33 -18.19 -18.10 -18.28 .02 .05 .25 .27 .29 .48 .59 .67 .64 .70 .73 .78 .84 .89 .91 .96 1.00 1.06 1.11 1.15 1.15 1.15 1.11 1.12 1.15 1.19 1.16 1.14 1.11 1.07 1.03 .98 .99 K Delay Mason's U ns .024 .024 .055 .033 .035 .041 .033 .032 .033 .034 .036 .040 .041 .040 .040 .039 .038 .033 .032 .033 .033 .040 .044 .040 .037 .031 .029 .029 .033 .036 .037 .039 .035 30.046 25.177 23.488 26.711 25.122 25.323 23.957 22.607 21.735 21.968 21.196 20.248 19.297 18.449 17.976 18.424 18.844 19.943 19.641 18.906 18.016 18.476 18.729 19.308 20.642 22.203 25.645 22.558 19.30 10.25 9.28 8.45 6.02 4.86 4.12 4.21 3.67 3.18 2.68 2.23 1.90 1.66 1.48 1.28 1.13 .99 .85 .82 .86 .97 1.12 1.30 1.43 1.59 1.77 1.90 2.15 2.40 2.78 3.03 dB G1 dB G2 dB .95 1.29 1.09 1.16 1.19 1.12 1.11 1.06 .93 .85 .76 .61 .48 .38 .29 .23 .19 .15 .12 .09 .07 .05 .05 .07 .11 .15 .20 .25 .31 .40 .46 .55 .69 6 NE325S01 NOISE PARAMETER 1 0.6 2 VDS = 2 V ID = 10 mA f = 12 GHz 0.2 5 opt 0 0.2 0.6 0.8 1.0 2.0 1.0 -0.2 -5 -2 -0.6 -1 Freq. (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 NFmin. (dB) 0.29 0.30 0.32 0.35 0.40 0.45 0.53 0.67 0.83 Ga (dB) 20.0 18.3 16.5 15.0 13.6 12.5 12.0 11.8 11.5 opt. MAG. 0.93 0.80 0.65 0.49 0.36 0.27 0.24 0.30 0.47 ANG. (deg.) 14 29 48 72 102 139 -176 -122 -58 Rn/50 0.38 0.33 0.25 0.18 0.11 0.08 0.07 0.10 0.22 7 NE325S01 TYPICAL MOUNT PAD LAYOUT 2.4 mm TYP. 8 2.4 mm TYP. NE325S01 RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL" (C10535E). Soldering process Infrared ray reflow Soldering conditions Peak package's surface temperature: 230 C or below, Reflow time: 30 seconds or below (210 C or higher), Number of reflow process: 1, Exposure limitNote: None Terminal temperature: 230 C or below, Flow time: 10 seconds or below, Exposure limitNote: None Symbol IR30-00 Partial heating method Note Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 C and relative humidity at 65 % or less. Caution Do not apply more than a single process at once, except for "Partial heating method". PRECAUTION Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. 9 NE325S01 [MEMO] 10 NE325S01 [MEMO] 11 NE325S01 Caution The Grate Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2 |
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